Funding Sponsor

Cairo University

Fifth Author's Department

Physics Department

Find in your Library

https://doi.org/10.1007/s10854-024-12204-4

All Authors

Ahmed Abdelhady A. Khalil, Abdallah M. Karmalawi, Alaaeldin A. Abdelmageed, Hamdan A.S. Al-shamiri, Heba A. Shawkey, Maram T.H.Abou Kana, Mohamed A. Swillam, Hamed M. Kandel

Document Type

Research Article

Publication Title

Journal of Materials Science: Materials in Electronics

Publication Date

3-1-2024

doi

10.1007/s10854-024-12204-4

Abstract

In this study, we present the fabrication and characterization of a thin film based on 1 T-MoS2 pn photodiode for the purpose of quick response photodetection application. The photodiode was fabricated using RF-sputtering process. The scanning electron microscopy (SEM) and Fourier-transform infrared spectroscopy (FTIR) techniques were employed to investigate the surface topology and structural characteristics of the nanostructured MoS2 thin film. The electrical properties of the photodiode that was produced were examined by conducting measurements of its current–voltage (I-V) characteristics across a range of bias voltages spanning from − 2 to + 2 V. The external quantum efficiency (EQE) of the pn photodiode that was produced was determined to be as high as 9.8%. Additionally, the internal quantum efficiency (IQE) was found to be as high as 10.5%. Furthermore, a time response of 1.748 ms was observed. The findings of this study illustrate the capability of MoS2 photodiodes in facilitating rapid response photodetection applications.

Download
Find this item online

Share

COinS