Behavior effect of Semiconductor 2D dopants on time response of TMDC-MoS2 based Schottky-photodiode

Third Author's Department

Physics Department

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https://doi.org/10.1109/PN62551.2024.10621755

All Authors

Ahmed Abdelhady A. Khalil, Maram T.H. Abou Kana, Mohamed A. Swillam

Document Type

Research Article

Publication Title

2024 Photonics North, PN 2024

Publication Date

1-1-2024

doi

10.1109/PN62551.2024.10621755

Abstract

SiC and GaN as 2D materials as well as MoS2 as a TMDC semiconducting material was chosen, a Shottkyphotodiode based SiC/MoS2 composite as well as GaN/MoS2 composite was fabricated, the resulted photodiode external quantum efficiency as well as internal quantum efficiency was compared to that of MoS2 based photodiode and consequently the time response was also compared.

Comments

Conference Paper. Record derived from SCOPUS.

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