Power yield analysis under process and temperature variations
Author's Department
Electronics & Communications Engineering Department
Find in your Library
https://doi.org/10.1109/TVLSI.2011.2163535
Document Type
Research Article
Publication Title
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Publication Date
1-1-2012
doi
10.1109/TVLSI.2011.2163535
First Page
1794
Last Page
1803
Recommended Citation
APA Citation
Haghdad, K.
&
Anis, M.
(2012). Power yield analysis under process and temperature variations. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 20(10), 1794–1803.
10.1109/TVLSI.2011.2163535
https://fount.aucegypt.edu/faculty_journal_articles/2173
MLA Citation
Haghdad, Kian, et al.
"Power yield analysis under process and temperature variations." IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 20,no. 10, 2012, pp. 1794–1803.
https://fount.aucegypt.edu/faculty_journal_articles/2173