Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties

Authors

K. M.A. Saron, Universiti Sains Malaysia
M. R. Hashim, Universiti Sains Malaysia
Nageh K. Allam, American University in CairoFollow

Author's Department

Physics Department

Find in your Library

https://doi.org/10.1063/1.4798266

Document Type

Research Article

Publication Title

Journal of Applied Physics

Publication Date

3-28-2013

doi

10.1063/1.4798266

Recommended Citation

APA Citation

Saron, K. Hashim, M. & Allam, N. (2013). Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties. Journal of Applied Physics, 113(12), https://doi.org/10.1063/1.4798266

MLA Citation

Saron, K. M.A., et al. "Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties." Journal of Applied Physics, vol. 113, no. 12, 2013
https://doi.org/10.1063/1.4798266