Enhanced light sensing characteristics of nanostructured gallium nitride/silicon heterojunctions: Interface matters
Author's Department
Physics Department
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https://doi.org/10.1063/1.4824691
Document Type
Research Article
Publication Title
Journal of Applied Physics
Publication Date
10-18-2013
doi
10.1063/1.4824691
Recommended Citation
APA Citation
Saron, K.
Hashim, M.
Naderi, N.
&
Allam, N.
(2013). Enhanced light sensing characteristics of nanostructured gallium nitride/silicon heterojunctions: Interface matters. Journal of Applied Physics, 114(13),
10.1063/1.4824691
https://fount.aucegypt.edu/faculty_journal_articles/1947
MLA Citation
Saron, K. M.A., et al.
"Enhanced light sensing characteristics of nanostructured gallium nitride/silicon heterojunctions: Interface matters." Journal of Applied Physics, vol. 114,no. 13, 2013,
https://fount.aucegypt.edu/faculty_journal_articles/1947