Abstract

The general goal of the VLSI technology is to produce very fast chips with very low power consumption. The technology scaling along with increasing the working frequency had been the perfect solution, which enabled the evolution of electronic devices in the 20th century. However, in deep sub-micron technologies, the on-chip power density limited the continuous increment in frequency, which led to another trend for designing higher performance chips without increasing the working speed. Parallelism was the optimum solution, and the VLSI manufacturers began the era of multi-core chips. These multi-core chips require a full inter-core network for the required communication. These on-chip links were conventionally parallel. However, due to reverse scaling in modern technologies, parallel signaling is becoming a burden due to the very large area of needed interconnects. Also, due to the very high power due to the tremendous number of repeaters, in addition to cross talk issues. As a solution, on-chip serial communication was suggested. It will solve all the previous issues, but it will require very high speed circuits to achieve the same data rates. This thesis presents two full SerDes transceiver designs for on-chip high speed serial communication. Both designs use long lossy on-chip differential interconnects with capacitive termination. The first design uses a 3-level self-timed signaling technique. This signaling technique is totally jitter-insensitive, since both of the data and clock are extracted at the receiver from the same signal. A new encoding and driving technique is designed to enable the transmitter to work at a frequency equal to the data rate, which is half of the frequency of the previous designs, along with achieving the same data rate. Also, this design generates the third voltage level without the need of an external supply. This design is very tolerant to any possible variations, such as PVT variations or the input clock's duty cycle variations. This transceiver is prepared for tape-out in UMC 0.13μm CMOS technology in June 2014. The second design uses a new 3-level signaling technique; the proposed technique uses a frequency of only half the data rate, which totally relaxes the full transceiver design. The new technique is also self-timed enabling the extraction of both the data, and the clock from the same signal. New encoders and decoders are designed, and a new architecture for a 3-level inverter is presented. This transceiver achieves very high data rates. This new design is expected to be taped-out using the GF 65nm CMOS technology in August 2014.

Department

Electronics & Communications Engineering Department

Degree Name

MS in Electronics & Communication Engineering

Graduation Date

2-1-2015

Submission Date

July 2014

First Advisor

Ismail, Yehea

Committee Member 1

Anis, Mohab

Committee Member 2

Dessouky, Mohamed

Extent

118 p.

Document Type

Master's Thesis

Library of Congress Subject Heading 1

Microelectronics.

Library of Congress Subject Heading 2

Instrumentation technicians.

Rights

The author retains all rights with regard to copyright. The author certifies that written permission from the owner(s) of third-party copyrighted matter included in the thesis, dissertation, paper, or record of study has been obtained. The author further certifies that IRB approval has been obtained for this thesis, or that IRB approval is not necessary for this thesis. Insofar as this thesis, dissertation, paper, or record of study is an educational record as defined in the Family Educational Rights and Privacy Act (FERPA) (20 USC 1232g), the author has granted consent to disclosure of it to anyone who requests a copy.

Institutional Review Board (IRB) Approval

Not necessary for this item

Comments

This research was partially funded by Zewail City of Science and Technology, AUC,Semi-Conductor Research Cooperation, Global Foundries, the STDF, Intel, Mentor Graphics, and MCIT.

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