Numerical Modeling and Optimization of High-Performance CsSnI3 Perovskite Photodetectors

Fourth Author's Department

Physics Department

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https://doi.org/10.1007/s11664-025-11925-4

All Authors

S. Yasin S. Christopoulos Z. Abu Waar M. Moustafa

Document Type

Research Article

Publication Title

Journal of Electronic Materials

Publication Date

7-1-2025

doi

10.1007/s11664-025-11925-4

Abstract

In this study, we present a numerical analysis of an inorganic CsSnI3 perovskite-based absorber layer within a vertical metal-semiconductor-metal photodetector configuration (indium tin oxide [ITO]/CsSnI3/Au) and explore how its performance is influenced by the thickness, doping, and defect density of the CsSnI3 layer. The photodetector’s performance varies with thickness due to changes in the photo-absorption rate. Responsivity and detectivity exhibit opposite trends with increasing doping density, influenced by variations in charge carrier concentration, mobility, and recombination rates. Higher defect density degrades performance by reducing the number of free carriers contributing to the photocurrent. A detailed analysis of the CsSnI3 layer's physical properties identified optimal thickness, doping density, and defect density of 400 nm, 1 × 1018 cm−3, and 1 × 1017 cm−3, respectively, for ideal photodetector performance. In addition, the study investigates the effects of incident light wavelength and intensity on the photodetector’s performance. The findings reveal that the photodetector achieves optimal performance at an incident light wavelength of 850 nm and light intensity of 1000 W/m2, resulting in responsivity of 0.64 A/W and detectivity of 6.62 × 1013 Jones. Our investigation clearly shows that the proposed photodetector is a compelling candidate for the future photosensing market, offering a low-cost, easy-to-fabricate, environmentally friendly solution.

First Page

5690

Last Page

5700

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