NUMERICAL OPTIMIZATION OF CIGS/CGS DOUBLE-ABSORBER SOLAR CELLS: ENHANCING EFFICIENCY THROUGH THICKNESS AND BANDGAP TUNING

Fifth Author's Department

Physics Department

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https://doi.org/10.3116/16091833/Ukr.J.Phys.Opt.2025.02104

All Authors

A. Nassour M. Kandouci Z. Abu Waar A. Belghachi M. Moustafa

Document Type

Research Article

Publication Title

Ukrainian Journal of Physical Optics

Publication Date

1-1-2025

doi

10.3116/16091833/Ukr.J.Phys.Opt.2025.02104

Abstract

In this study, we utilized SCAPS simulation to evaluate the performance of an innovative copper indium gallium selenide (CIGS)-based solar cell architecture meticulously designed to achieve superior conversion efficiency. We employed a novel functionality to predict the absorber layer's bandgap and electron affinity across varying gallium (Ga) concentrations (x). To mitigate back-contact recombination losses, we investigated the incorporation of a copper gallium selenide (CGS) layer with a high bandgap (1.7 eV) near the molybdenum back contact, which acts as an electron reflector. The performance enhancement of CIGS solar cells through Ga grading of the absorber layer is demonstrated. Our findings revealed that in a dual-absorber layer configuration, conversion efficiency steadily increased as the CGS layer's thickness approached approximately 90% of the overall absorber thickness. Additionally, we examined the impact of a graded bandgap toward the back of the top absorber layer, i.e., the CIGS. The results demonstrated that an optimized CIGS (graded)/CGS/Mo system exhibits exceptional photovoltaic performance, achieving an optimal efficiency of 25.98%.

First Page

2104

Last Page

2118

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