Enhancing CFTS solar cell performance with innovative MoS2 buffer layers

Author's Department

Physics Department

Second Author's Department

Physics Department

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https://doi.org/10.1080/23080477.2025.2488732

All Authors

Mohamed Moustafa Ziad Abu Waar Shadi Yasin

Document Type

Research Article

Publication Title

Smart Science

Publication Date

1-1-2025

doi

10.1080/23080477.2025.2488732

Abstract

This study explores the photovoltaic performance of a novel high efficiency heterostructure utilizing the quaternary semiconductor Cu2FeSnS4 (CFTS), known for its non-toxicity and abundance in the earth’s crust. Our investigation focuses on assessing the viability of a pioneering approach, a new n-type MoS2 transition metal dichalcogenides (TMDCs) as a buffer layer. Using the SCAPS simulator, we analyze various electrical specifications such as short circuit current (Jsc), open circuit voltage (Voc), the fill factor (FF), and power conversion efficiency (PCE) at a large range of thicknesses of the CFTS absorber and MoS2 buffer layers, the acceptor carrier concentration doping (NA), and the work function. Our results demonstrate optimized parameters yielding a remarkable PCE of 26.47%, accompanied by a Voc of 1.194 V, Jsc of 35.37 mA/cm2, and FF of 62.65% at 0.2 μm of CFTS absorber thickness. Furthermore, the performance of the photovoltaic cell is evaluated against the defect level of the CFTS absorber and MoS2 buffer layers, revealing that deep defect levels beyond 1 × 1017 cm−3 diminish Jsc. Finally, the impact of operating temperature on cell performance within the range of 300 to 600 K is examined and discussed. Notably, the observed decline in the Voc is most likely attributed to the rise in the saturation current, suggesting an interplay between temperature and cell behavior. Overall, the study underscores the potential of MoS2 as a viable alternative for fabricating nontoxic CFTS solar cells.

First Page

445

Last Page

458

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