Effect of ge content on the structural, optical, and mechanical properties of GexSn50-xTe50 alloys

Funding Sponsor

Science and Technology Development Fund

Author's Department

Physics Department

Second Author's Department

Physics Department

Third Author's Department

Physics Department

Fourth Author's Department

Physics Department

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https://doi.org/10.1007/s10854-025-15303-y

All Authors

Sara A. Mahmoud Iman A. Mahdy Hosny A. Omar A. A. Bahgat

Document Type

Research Article

Publication Title

Journal of Materials Science Materials in Electronics

Publication Date

7-1-2025

doi

10.1007/s10854-025-15303-y

Abstract

In the current study, GexSn50-xTe50 (where x = 2.5, 5, 7.5, 10, 12.5, and at.15%) bulk samples were prepared using solid-state direct reaction. Structural analysis using X-ray diffraction (XRD), confirmed by the Rietveld refinement, a face-centered cubic (FCC) structure with a systematic decrease in lattice constant from 6.30497 Ã… to 6.218 Ã… as Ge content increased, attributed to the substitution of smaller Ge atoms for Sn. High-resolution transmission electron microscopy (HR-TEM) confirmed the nanocrystalline characteristics of the samples, and density measurements utilizing the Archimedes approach indicated a reduction in density with elevated Ge content. The optical properties were examined by diffuse reflectance spectroscopy, indicating a near-infrared absorption edge at roughly 826 nm, with a direct transition at a bandgap of about 1.5 eV for all compositions. Vickers microhardness testing at 10, 25, and 50 gf indentation forces was used to examine the mechanical properties. Hardness was increased with Ge content, reaching 135 HV at x = 15% (10 gf). These studies demonstrate that Ge-Sn-Te alloys have a consistent optical response, making them suitable candidates for infrared photodetectors.

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