Quantum efficiency dependence on semiconductor 2D dopants in TMDC-MoS2 based Schottky-photodiode

Third Author's Department

Physics Department

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https://doi.org/10.1117/12.3043050

All Authors

Ahmed Abdelhady A. Khalil Maram T.H. Abou Kana Mohamed A. Swillam

Document Type

Research Article

Publication Title

Proceedings of SPIE the International Society for Optical Engineering

Publication Date

1-1-2025

doi

10.1117/12.3043050

Abstract

The RF-sputtering deposition technique was utilized to deposit MoS2, a semiconducting material in the TMDC family, both individually and in composite forms with GaN and SiC as 2D materials, to create thin films. Subsequently, a Schottky-photodiode structure was fabricated using the MoS2, SiC/MoS2 composite, and GaN/MoS2 composite. The external quantum efficiency and internal quantum efficiency of the resulting photodiodes were compared against those of the MoS2-based photodiode.

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