Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio

Authors

Asad A. Thahe, Department of Medical Physics, College of Applied Science, University of Fallujah, Baghdad, Iraq
Motahher A. Qaeed, Faculty of Science, University of Jeddah, Jeddah, Saudi Arabia
Suhail Najm Abdullah, Department of Medical Equipment Technology Engineering, Al-Rasheed University College, Baghdad, Iraq
Ibrahim M. Badawy, Energy Materials Laboratory, School of Sciences and Engineering, The American University in Cairo, New Cairo 11835, Egypt

Fourth Author's Department

Energy Materials Laboratory

Document Type

Research Article

Publication Title

Journal of Nanomaterials

Publication Date

4-26-2023

doi

10.1155/2023/6576028

Recommended Citation

APA Citation

Thahe, A. Qaeed, M. Abdullah, S. & Badawy, I. (2023). Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio. Journal of Nanomaterials, 2023, 10.1155/2023/6576028
https://fount.aucegypt.edu/faculty_journal_articles/5529

MLA Citation

Thahe, Asad A., et al. "Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio." Journal of Nanomaterials, vol. 2023, 2023,
https://fount.aucegypt.edu/faculty_journal_articles/5529