Hydrogenated Zinc Oxide as an Alternative Low-Loss Plasmonic Material with Fano Resonance in Near-IR
Author's Department
Electronics & Communications Engineering Department
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https://doi.org/10.1021/acs.jpcc.2c01844
Document Type
Research Article
Publication Title
The Journal of Physical Chemistry C
Publication Date
4-27-2022
doi
10.1021/acs.jpcc.2c01844
Abstract
Low-loss plasmonic materials are of great importance due to their use in many photonic and optoelectronic devices. Doped transparent conducting oxides (TCOs) are potential alternatives to metallic plasmonic materials owing to their reduced losses and the tunability of their complex dielectric function. In this work, first-principles calculations were employed to reveal the role of interstitial hydrogen (Hi) doping in zinc oxide (ZnO) to achieve low losses and excite surface plasmon polaritons (SPPs). Three different concentrations of Hi doping (4.16, 6.25, 8.33%) were investigated. The results show that an Hi concentration as low as 4.16% achieves excellent low-loss plasmonic behavior. The fitted Drude damping parameter at 4.16% Hi doping was found to be lower than that reported for the same aluminum (Al) concentration. Finally, we numerically show that Fano resonance can be excited in near-infrared (IR) using a simple symmetric cylinder with an air hole made of hydrogen-doped ZnO placed on a pure ZnO substrate, revealing its potential use in numerous applications.
First Page
8190
Last Page
8198
Recommended Citation
APA Citation
Fawzy, S.
Ismail, Y.
&
Allam, N.
(2022). Hydrogenated Zinc Oxide as an Alternative Low-Loss Plasmonic Material with Fano Resonance in Near-IR. The Journal of Physical Chemistry C, 126(18), 8190–8198.
10.1021/acs.jpcc.2c01844
https://fount.aucegypt.edu/faculty_journal_articles/4755
MLA Citation
Fawzy, Samar M., et al.
"Hydrogenated Zinc Oxide as an Alternative Low-Loss Plasmonic Material with Fano Resonance in Near-IR." The Journal of Physical Chemistry C, vol. 126,no. 18, 2022, pp. 8190–8198.
https://fount.aucegypt.edu/faculty_journal_articles/4755