Temperature dependence of GaN HEMT small signal parameters
Author's Department
Electronics & Communications Engineering Department
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https://doi.org/10.1155/2011/945189
Document Type
Research Article
Publication Title
International Journal of Microwave Science and Technology
Publication Date
12-1-2011
doi
10.1155/2011/945189
Abstract
This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0150C range. The changes with temperature for transconductance (g m), output impedance (C ds and R ds), feedback capacitance (C dg), input capacitance (C gs), and gate resistance (R g) are measured. The variations with temperature are established for g m, C ds, R ds, C dg, C gs, and R g in the GaN technology. This information is useful for MMIC designs. © 2011 Ali M. Darwish et al.
Recommended Citation
APA Citation
Darwish, A.
Ibrahim, A.
&
Hung, H.
(2011). Temperature dependence of GaN HEMT small signal parameters. International Journal of Microwave Science and Technology,
10.1155/2011/945189
https://fount.aucegypt.edu/faculty_journal_articles/2200
MLA Citation
Darwish, Ali M., et al.
"Temperature dependence of GaN HEMT small signal parameters." International Journal of Microwave Science and Technology, 2011,
https://fount.aucegypt.edu/faculty_journal_articles/2200