Silicon Germanium as a novel mask for silicon deep reactive ion etching
Author's Department
Physics Department
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https://doi.org/10.1109/MEMSYS.2012.6170159
Document Type
Research Article
Publication Title
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Publication Date
5-7-2012
doi
10.1109/MEMSYS.2012.6170159
First Page
321
Last Page
324
Recommended Citation
APA Citation
Serry, M.
Ibrahim, M.
&
Sedky, S.
(2012). Silicon Germanium as a novel mask for silicon deep reactive ion etching. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 321–324.
10.1109/MEMSYS.2012.6170159
https://fount.aucegypt.edu/faculty_journal_articles/2146
MLA Citation
Serry, M., et al.
"Silicon Germanium as a novel mask for silicon deep reactive ion etching." Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 2012, pp. 321–324.
https://fount.aucegypt.edu/faculty_journal_articles/2146