SiGe MEMS at processing temperatures below 250°C

Authors

Joumana El-Rifai, Interuniversity Micro-Electronics Center at Leuven
Sherif Sedky, American University in CairoFollow
Rita Van Hoof, Interuniversity Micro-Electronics Center at Leuven
Simone Severi, Interuniversity Micro-Electronics Center at Leuven
Dennis Lin, Interuniversity Micro-Electronics Center at Leuven
Sandeep Sangameswaran, Interuniversity Micro-Electronics Center at Leuven
Robert Puers, Interuniversity Micro-Electronics Center at Leuven
Chris Van Hoof, Interuniversity Micro-Electronics Center at Leuven
Ann Witvrouw, Interuniversity Micro-Electronics Center at Leuven

Author's Department

Physics Department

Find in your Library

https://doi.org/10.1016/j.sna.2012.01.035

Document Type

Research Article

Publication Title

Sensors and Actuators, A: Physical

Publication Date

12-1-2012

doi

10.1016/j.sna.2012.01.035

First Page

230

Last Page

239

Recommended Citation

APA Citation

El-Rifai, J. Sedky, S. Van Hoof, R. Severi, S. ... (2012). SiGe MEMS at processing temperatures below 250°C. Sensors and Actuators, A: Physical, 188, 230–239. 10.1016/j.sna.2012.01.035
https://fount.aucegypt.edu/faculty_journal_articles/2096

MLA Citation

El-Rifai, Joumana, et al. "SiGe MEMS at processing temperatures below 250°C." Sensors and Actuators, A: Physical, vol. 188, 2012, pp. 230–239.
https://fount.aucegypt.edu/faculty_journal_articles/2096