Theoretical study of metal-insulator-metal tunneling diode figures of merit
Author's Department
Physics Department
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https://doi.org/10.1109/JQE.2012.2228166
Document Type
Research Article
Publication Title
IEEE Journal of Quantum Electronics
Publication Date
1-1-2013
doi
10.1109/JQE.2012.2228166
First Page
72
Last Page
79
Recommended Citation
APA Citation
Hashem, I.
Rafat, N.
&
Soliman, E.
(2013). Theoretical study of metal-insulator-metal tunneling diode figures of merit. IEEE Journal of Quantum Electronics, 49(1), 72–79.
10.1109/JQE.2012.2228166
https://fount.aucegypt.edu/faculty_journal_articles/2045
MLA Citation
Hashem, Islam E., et al.
"Theoretical study of metal-insulator-metal tunneling diode figures of merit." IEEE Journal of Quantum Electronics, vol. 49,no. 1, 2013, pp. 72–79.
https://fount.aucegypt.edu/faculty_journal_articles/2045