Electrical characterization of nanopolyaniline/porous silicon heterojunction at high temperatures
Author's Department
Physics Department
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https://doi.org/10.1155/2013/568175
Document Type
Research Article
Publication Title
Journal of Nanomaterials
Publication Date
4-3-2013
doi
10.1155/2013/568175
Abstract
Nanopolyaniline/p-type porous silicon (NPANI/PSi) heterojunction films were chemically fabricated via in situ polymerization. The composition and morphology of the nanopolymer were confirmed using Fourier transform infrared, scanning electron microscopy, UV-visible, and transmission electron microscopy techniques. The results indicated that the polymerization took place throughout the porous layer. The I-V measurements, performed at different temperatures, enabled the calculation of ideality factor, barrier height, and series resistance of those films. The obtained ideality factor showed a nonideal diode behavior. The series resistance was found to decrease with increasing temperature. © 2013 Salah E. El-Zohary et al.
Recommended Citation
APA Citation
El-Zohary, S.
Shenashen, M.
Allam, N.
Okamoto, T.
&
Haraguchi, M.
(2013). Electrical characterization of nanopolyaniline/porous silicon heterojunction at high temperatures. Journal of Nanomaterials, 2013,
10.1155/2013/568175
https://fount.aucegypt.edu/faculty_journal_articles/1995
MLA Citation
El-Zohary, Salah E., et al.
"Electrical characterization of nanopolyaniline/porous silicon heterojunction at high temperatures." Journal of Nanomaterials, vol. 2013, 2013,
https://fount.aucegypt.edu/faculty_journal_articles/1995