Nanometer variation-tolerant SRAM: Circuits and statistical design for yield

Authors

Mohamed H. Abu-Rahma, Qualcomm Incorporated
Mohab Anis, American University in CairoFollow

Author's Department

Electronics & Communications Engineering Department

Find in your Library

https://doi.org/10.1007/978-1-4614-1749-1

Document Type

Research Article

Publication Title

Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield

Publication Date

5-1-2013

doi

10.1007/978-1-4614-1749-1

First Page

1

Last Page

170

Recommended Citation

APA Citation

Abu-Rahma, M. & Anis, M. (2013). Nanometer variation-tolerant SRAM: Circuits and statistical design for yield. Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield, 9781461417491, 1–170. 10.1007/978-1-4614-1749-1
https://fount.aucegypt.edu/faculty_journal_articles/1985

MLA Citation

Abu-Rahma, Mohamed H., et al. "Nanometer variation-tolerant SRAM: Circuits and statistical design for yield." Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield, vol. 9781461417491, 2013, pp. 1–170.
https://fount.aucegypt.edu/faculty_journal_articles/1985