A ring-HEMT for improved GaN MMIC thermal dissipation
Electronics & Communications Engineering Department
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IEEE MTT-S International Microwave Symposium Digest
A novel GaN HEMT which reduces the junction temperature is presented. The new structure uses a ring-like layout for the gate stripes, aimed at increasing the separation between stripes. Simulation and experimental results indicate improved performance of the Ring-HEMT, stemming from thermal effects and their interaction with device parameters. Compared to a regular HEMT, the new HEMT showed a decrease in junction temperature of 40°C from 178 °C resulting in a significant improvement in output power, and 43× fold increase in lifetime. © 2013 IEEE.
Darwish, A. M.
(2013). A ring-HEMT for improved GaN MMIC thermal dissipation. IEEE MTT-S International Microwave Symposium Digest,
Darwish, Ali, et al.
"A ring-HEMT for improved GaN MMIC thermal dissipation." IEEE MTT-S International Microwave Symposium Digest, 2013,