A ring-HEMT for improved GaN MMIC thermal dissipation
Author's Department
Electronics & Communications Engineering Department
Find in your Library
https://doi.org/10.1109/MWSYM.2013.6697631
Document Type
Research Article
Publication Title
IEEE MTT-S International Microwave Symposium Digest
Publication Date
12-1-2013
doi
10.1109/MWSYM.2013.6697631
Abstract
A novel GaN HEMT which reduces the junction temperature is presented. The new structure uses a ring-like layout for the gate stripes, aimed at increasing the separation between stripes. Simulation and experimental results indicate improved performance of the Ring-HEMT, stemming from thermal effects and their interaction with device parameters. Compared to a regular HEMT, the new HEMT showed a decrease in junction temperature of 40°C from 178 °C resulting in a significant improvement in output power, and 43× fold increase in lifetime. © 2013 IEEE.
Recommended Citation
APA Citation
Darwish, A. M.
Hung, H.
&
Ibrahim, A.
(2013). A ring-HEMT for improved GaN MMIC thermal dissipation. IEEE MTT-S International Microwave Symposium Digest,
10.1109/MWSYM.2013.6697631
https://fount.aucegypt.edu/faculty_journal_articles/1926
MLA Citation
Darwish, Ali, et al.
"A ring-HEMT for improved GaN MMIC thermal dissipation." IEEE MTT-S International Microwave Symposium Digest, 2013,
https://fount.aucegypt.edu/faculty_journal_articles/1926