A ring-HEMT for improved GaN MMIC thermal dissipation

Author's Department

Electronics & Communications Engineering Department

Find in your Library

https://doi.org/10.1109/MWSYM.2013.6697631

Document Type

Research Article

Publication Title

IEEE MTT-S International Microwave Symposium Digest

Publication Date

12-1-2013

doi

10.1109/MWSYM.2013.6697631

Abstract

A novel GaN HEMT which reduces the junction temperature is presented. The new structure uses a ring-like layout for the gate stripes, aimed at increasing the separation between stripes. Simulation and experimental results indicate improved performance of the Ring-HEMT, stemming from thermal effects and their interaction with device parameters. Compared to a regular HEMT, the new HEMT showed a decrease in junction temperature of 40°C from 178 °C resulting in a significant improvement in output power, and 43× fold increase in lifetime. © 2013 IEEE.

This document is currently not available here.

Share

COinS