Scaling of TG-FinFETs: 3-D Monte Carlo simulations in the ballistic and quasi-ballistic regimes
Author's Department
Electronics & Communications Engineering Department
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Document Type
Research Article
Publication Title
IEEE Transactions on Electron Devices
Publication Date
6-1-2015
doi
10.1109/TED.2015.2420580
First Page
1796
Last Page
1802
Recommended Citation
APA Citation
Elthakeb, A.
Elhamid, H.
&
Ismail, Y.
(2015). Scaling of TG-FinFETs: 3-D Monte Carlo simulations in the ballistic and quasi-ballistic regimes. IEEE Transactions on Electron Devices, 62(6), 1796–1802.
10.1109/TED.2015.2420580
https://fount.aucegypt.edu/faculty_journal_articles/1663
MLA Citation
Elthakeb, Ahmed T., et al.
"Scaling of TG-FinFETs: 3-D Monte Carlo simulations in the ballistic and quasi-ballistic regimes." IEEE Transactions on Electron Devices, vol. 62,no. 6, 2015, pp. 1796–1802.
https://fount.aucegypt.edu/faculty_journal_articles/1663