Coupling capacitance in through-silicon vias: Non-homogeneous medium effect
Funding Sponsor
Intel Corporation
Author's Department
Electronics & Communications Engineering Department
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Document Type
Research Article
Publication Title
Electronics Letters
Publication Date
1-21-2016
doi
10.1049/el.2015.3141
First Page
152
Last Page
154
Recommended Citation
APA Citation
Ramadan, T.
Yahya, E.
Ismail, Y.
&
Dessouky, M.
(2016). Coupling capacitance in through-silicon vias: Non-homogeneous medium effect. Electronics Letters, 52(2), 152–154.
10.1049/el.2015.3141
https://fount.aucegypt.edu/faculty_journal_articles/1586
MLA Citation
Ramadan, T., et al.
"Coupling capacitance in through-silicon vias: Non-homogeneous medium effect." Electronics Letters, vol. 52,no. 2, 2016, pp. 152–154.
https://fount.aucegypt.edu/faculty_journal_articles/1586