Laser annealing enhanced the photophysical performance of Pt/n-PSi/ZnO/Pt-based photodetectors

Authors

Asad A. Thahe, Universiti Teknologi Malaysia
Basant A. Ali, American University in Cairo
Hazri Bakhtiar, Universiti Teknologi Malaysia
M. B. Uday, Universiti Teknologi Malaysia
Z. Hassan, Universiti Sains Malaysia
Mundzir Abdullah, Universiti Sains Malaysia
M. A. Qaeed, University of Jeddah
Hasan Alqaraghuli, Universiti Teknologi Malaysia
Hussein Abd Zaidan, Middle Technical University
Nageh K. Allam, American University in CairoFollow

Funding Number

130000.2524.17H83

Author's Department

Physics Department

Find in your Library

https://doi.org/10.1016/j.sse.2020.107821

Document Type

Research Article

Publication Title

Solid-State Electronics

Publication Date

9-1-2020

doi

10.1016/j.sse.2020.107821

Recommended Citation

APA Citation

Thahe, A. Ali, B. Bakhtiar, H. Uday, M. ... (2020). Laser annealing enhanced the photophysical performance of Pt/n-PSi/ZnO/Pt-based photodetectors. Solid-State Electronics, 171, https://doi.org/10.1016/j.sse.2020.107821

MLA Citation

Thahe, Asad A., et al. "Laser annealing enhanced the photophysical performance of Pt/n-PSi/ZnO/Pt-based photodetectors." Solid-State Electronics, vol. 171, 2020
https://doi.org/10.1016/j.sse.2020.107821