Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices
Author's Department
Physics Department
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https://doi.org/10.1039/d0ra05973k
Document Type
Research Article
Publication Title
RSC Advances
Publication Date
9-10-2020
doi
10.1039/d0ra05973k
First Page
33526
Last Page
33533
Recommended Citation
APA Citation
Saron, K.
Hashim, M.
Ibrahim, M.
Yahyaoui, M.
&
Allam, N.
(2020). Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices. RSC Advances, 10(55), 33526–33533.
10.1039/d0ra05973k
https://fount.aucegypt.edu/faculty_journal_articles/1425
MLA Citation
Saron, K. M.A., et al.
"Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices." RSC Advances, vol. 10,no. 55, 2020, pp. 33526–33533.
https://fount.aucegypt.edu/faculty_journal_articles/1425