Lithography-Free Fabrication of Crystalline Silicon Nanowires Using Amorphous Silicon Substrate for Wide-Angle Energy Absorption Applications
Author's Department
Nanotechnology Program
Second Author's Department
Physics Department
Third Author's Department
Nanotechnology Program
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https://pubs.acs.org/doi/10.1021/acsanm.8b00598
Document Type
Research Article
Publication Title
ACS Applied Nano Materials
Publication Date
12-31-2018
doi
10.1021/acsanm.8b00598
Abstract
We report a one-step fabrication technique of silicon nanowires using KrF excimer laser. Nanowires (NWs) are fabricated by redistributing the silicon mass within the sample without etching any of the deposited amorphous silicon (a-Si). Melting and resolidification of a-Si after multiple pulses laser irradiation induced the formation of NWs with lengths more than triple the thickness of the deposited film achieving a longer light path length. This resulted in a broadband absorption enhancement with reflection less than 5% for angle of incidences up to 60°. The effect of changing each laser parameter such as energy density, exposure time, and frequency on the morphology and optical properties of the NWs are systemically analyzed and compared.
First Page
2990
Last Page
2996
Recommended Citation
APA Citation
Magdi, S.
El-Rifai, J. M.
&
Swillam, M. A.
(2018). Lithography-Free Fabrication of Crystalline Silicon Nanowires Using Amorphous Silicon Substrate for Wide-Angle Energy Absorption Applications. ACS Applied Nano Materials, 1(6), 2990–2996.
10.1021/acsanm.8b00598
https://fount.aucegypt.edu/faculty_journal_articles/140
MLA Citation
Magdi, Sara, et al.
"Lithography-Free Fabrication of Crystalline Silicon Nanowires Using Amorphous Silicon Substrate for Wide-Angle Energy Absorption Applications." ACS Applied Nano Materials, vol. 1,no. 6, 2018, pp. 2990–2996.
https://fount.aucegypt.edu/faculty_journal_articles/140