Silicon-on-sapphire (SOS) waveguide modal analysis for mid-infrared applications
Author's Department
Physics Department
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https://doi.org/10.1088/2399-6528/aa8aaa
Document Type
Research Article
Publication Title
Journal of Physics Communications
Publication Date
10-1-2017
doi
10.1088/2399-6528/aa8aaa
Abstract
© 2017 The Author(s). Mid infrared photonics is a very promising field with many applications in various areas. Silicon-on-sapphire (SOS) is one of the proposed platforms for this region. This paper present a novel and rigorous modal analysis of the SOS strip waveguide in the mid-infrared range from λ = 2 to 6 μm using finite element method solver. The analysis include fundamental and higher modes with both transverse-electric (TE) and transverse-magnetic (TM) polarization, where the dependence of these modes on the waveguide dimensions have been studied. Based on our modal analysis, a compact, wideband and easy to fabricate TE-pass and TM-pass integrated silicon waveguide polarizers have been designed. The different polarizer designs spans the whole mid-infrared transparency region of the SOS waveguide (λ = 2–6 μm). The TE-pass polarizer reaches 35.14 dB polarization extinction ratio while the TM-pass polarizer reaches 69.77 dB polarization extinction ratio with structure length of only 23 μm.
Recommended Citation
APA Citation
El Shamy, R.
Mossad, H.
&
Swillam, M. A.
(2017). Silicon-on-sapphire (SOS) waveguide modal analysis for mid-infrared applications. Journal of Physics Communications, 1(3),
10.1088/2399-6528/aa8aaa
https://fount.aucegypt.edu/faculty_journal_articles/1210
MLA Citation
El Shamy, Raghi S., et al.
"Silicon-on-sapphire (SOS) waveguide modal analysis for mid-infrared applications." Journal of Physics Communications, vol. 1,no. 3, 2017,
https://fount.aucegypt.edu/faculty_journal_articles/1210