Silicon-on-sapphire (SOS) waveguide modal analysis for mid-infrared applications

Author's Department

Physics Department

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https://doi.org/10.1088/2399-6528/aa8aaa

Document Type

Research Article

Publication Title

Journal of Physics Communications

Publication Date

10-1-2017

doi

10.1088/2399-6528/aa8aaa

Abstract

© 2017 The Author(s). Mid infrared photonics is a very promising field with many applications in various areas. Silicon-on-sapphire (SOS) is one of the proposed platforms for this region. This paper present a novel and rigorous modal analysis of the SOS strip waveguide in the mid-infrared range from λ = 2 to 6 μm using finite element method solver. The analysis include fundamental and higher modes with both transverse-electric (TE) and transverse-magnetic (TM) polarization, where the dependence of these modes on the waveguide dimensions have been studied. Based on our modal analysis, a compact, wideband and easy to fabricate TE-pass and TM-pass integrated silicon waveguide polarizers have been designed. The different polarizer designs spans the whole mid-infrared transparency region of the SOS waveguide (λ = 2–6 μm). The TE-pass polarizer reaches 35.14 dB polarization extinction ratio while the TM-pass polarizer reaches 69.77 dB polarization extinction ratio with structure length of only 23 μm.

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