Laser annealed SiGe devices for MEMS applications at temperatures below 250C

Chapter Title

Laser annealed SiGe devices for MEMS applications at temperatures below 250C

Files

Department

Physics Department

Description

[abstract not available]

Publication Date

9-1-2011

Document Type

Book Chapter

Book Title

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

ISBN

SCOPUS_ID:80052127804

Publisher

IEEE

City

Beijing, China

First Page

1336

Last Page

1339

Keywords

amorphous materials, CMOS post-processing, contact resistance, Laser annealing, low thermal budget, Silicon Germanium, strain gradient

Laser annealed SiGe devices for MEMS applications at temperatures below 250C

Share

COinS