Contact resistivity of laser annealed SiGe for MEMS structural layers deposited at 210°C
Files
Department
Physics Department
Abstract
[abstract not available]
Publication Date
9-30-2011
Document Type
Book Chapter
Book Title
Materials Research Society Symposium Proceedings
ISBN
SCOPUS_ID:80053207579
Publisher
Springer
City
Leuven, Belgium
First Page
73
Last Page
78
Recommended Citation
APA Citation
El-Rifai, J.
Witvrouw, A.
Aziz, A.
Puers, R.
&
Van Hoof, C.
(2011). Contact resistivity of laser annealed SiGe for MEMS structural layers deposited at 210°C. Materials Research Society Symposium Proceedings (pp. 73-78). Springer.
MLA Citation
El-Rifai, Joumana, et al.
"Contact resistivity of laser annealed SiGe for MEMS structural layers deposited at 210°C." Materials Research Society Symposium Proceedings, Springer, 2011. pp. 73-78