Contact resistivity of laser annealed SiGe for MEMS structural layers deposited at 210°C

Authors

Joumana El-Rifai, Interuniversity Micro-Electronics Center at Leuven
Ann Witvrouw, Interuniversity Micro-Electronics Center at Leuven
Ahmed Abdel Aziz, American University in Cairo
Robert Puers, Interuniversity Micro-Electronics Center at Leuven
Chris Van Hoof, Interuniversity Micro-Electronics Center at Leuven

Files

Department

Physics Department

Abstract

[abstract not available]

Publication Date

9-30-2011

Document Type

Book Chapter

Book Title

Materials Research Society Symposium Proceedings

ISBN

SCOPUS_ID:80053207579

Publisher

Springer

City

Leuven, Belgium

First Page

73

Last Page

78

Recommended Citation

APA Citation

El-Rifai, J. Witvrouw, A. Aziz, A. Puers, R. & Van Hoof, C. (2011).Contact resistivity of laser annealed SiGe for MEMS structural layers deposited at 210°C. Springer. , 73-78
https://fount.aucegypt.edu/faculty_book_chapters/701

MLA Citation

El-Rifai, Joumana, et al. Contact resistivity of laser annealed SiGe for MEMS structural layers deposited at 210°C. Springer, 2011.pp. 73-78
https://fount.aucegypt.edu/faculty_book_chapters/701