Laser annealed SiGe devices for MEMS applications at temperatures below 250C

Authors

J. El-Rifai, Interuniversity Micro-Electronics Center at Leuven
S. Sedky, American University in CairoFollow
R. Van Hoof, Interuniversity Micro-Electronics Center at Leuven
S. Severi, Interuniversity Micro-Electronics Center at Leuven
D. Lin, Interuniversity Micro-Electronics Center at Leuven

Files

Department

Physics Department

Abstract

[abstract not available]

Publication Date

9-1-2011

Document Type

Book Chapter

Book Title

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

ISBN

SCOPUS_ID:80052127804

Publisher

IEEE

City

Beijing, China

First Page

1336

Last Page

1339

Keywords

amorphous materials, CMOS post-processing, contact resistance, Laser annealing, low thermal budget, Silicon Germanium, strain gradient

Recommended Citation

APA Citation

El-Rifai, J. Sedky, S. Van Hoof, R. Severi, S. & Lin, D. (2011).Laser annealed SiGe devices for MEMS applications at temperatures below 250C. IEEE. , 1336-1339
https://fount.aucegypt.edu/faculty_book_chapters/708

MLA Citation

El-Rifai, J., et al. Laser annealed SiGe devices for MEMS applications at temperatures below 250C. IEEE, 2011.pp. 1336-1339
https://fount.aucegypt.edu/faculty_book_chapters/708