Accuracy-improved coupling capacitance model for through-silicon via (TSV) arrays using dimensional analysis

Authors

Tarek Ramadan, Mentor Graphics Corporation
Eslam Yahya, American University in Cairo
Mohamed Dessouky, Mentor Graphics Corporation
Yehea Ismail, American University in CairoFollow

Files

Department

Electronics & Communications Engineering Department

Abstract

[abstract not available]

Publication Date

7-29-2016

Document Type

Book Chapter

Book Title

Proceedings - IEEE International Symposium on Circuits and Systems

ISBN

SCOPUS_ID:84983375216

Publisher

IEEE

City

Montreal, QC

First Page

1930

Last Page

1933

Keywords

2.5D-IC, 3D-IC, SiP, TSV

Recommended Citation

APA Citation

Ramadan, T. Yahya, E. Dessouky, M. & Ismail, Y. (2016).Accuracy-improved coupling capacitance model for through-silicon via (TSV) arrays using dimensional analysis. IEEE. , 1930-1933
https://fount.aucegypt.edu/faculty_book_chapters/320

MLA Citation

Ramadan, Tarek, et al. Accuracy-improved coupling capacitance model for through-silicon via (TSV) arrays using dimensional analysis. IEEE, 2016.pp. 1930-1933
https://fount.aucegypt.edu/faculty_book_chapters/320