Accuracy-improved coupling capacitance model for through-silicon via (TSV) arrays using dimensional analysis
Files
Department
Electronics & Communications Engineering Department
Description
[abstract not available]
Publication Date
7-29-2016
Document Type
Book Chapter
Book Title
Proceedings - IEEE International Symposium on Circuits and Systems
ISBN
SCOPUS_ID:84983375216
Publisher
IEEE
City
Montreal, QC
First Page
1930
Last Page
1933
Keywords
2.5D-IC, 3D-IC, SiP, TSV
Recommended Citation
APA Citation
Ramadan, T.
Yahya, E.
Dessouky, M.
&
Ismail, Y.
(2016).Accuracy-improved coupling capacitance model for through-silicon via (TSV) arrays using dimensional analysis. IEEE. , 1930-1933
https://fount.aucegypt.edu/faculty_book_chapters/320
MLA Citation
Ramadan, Tarek, et al.
Accuracy-improved coupling capacitance model for through-silicon via (TSV) arrays using dimensional analysis. IEEE, 2016.pp. 1930-1933
https://fount.aucegypt.edu/faculty_book_chapters/320