Ultra-broadband MIR super absorber using all silicon metasurface of triangular doped nanoprisms
Author's Department
Physics Department
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https://doi.org/10.1038/s41598-022-18817-1
Document Type
Research Article
Publication Title
Scientific Reports
Publication Date
Summer 8-31-2022
doi
10.1038/s41598-022-18817-1
Abstract
Thermo-electric generation offers to be a solid candidate for both dealing with the temperature problems of photo-voltaic cells and increasing its total output power. However, it requires an efficient broadband absorber to harness the power found in the near and mid-infrared regions. In this work, we discuss a new structure of nanoprisms that are made of doped silicon that acts as an ultra-broadband absorber in both regions. We also discuss the effect of the doping concentration. Additionally, we study the effect of a pure silicon thin film on top of the prisms. Finally, we’re able to find an optimized structure that can absorb 92.6% of the input power from 1 to 15μm.
First Page
1
Last Page
6
Recommended Citation
Abdelsalam, M., Swillam, M.A. Ultra-broadband MIR super absorber using all silicon metasurface of triangular doped nanoprisms. Sci Rep 12, 14802 (2022). https://doi.org/10.1038/s41598-022-18817-1