Title

A study of the structural, optical, and ferroelectric characteristics of Pb-Ge-Te nanocrystalline alloys as potential candidates for memory devices and Near-Infrared (NIR) applications

Author's Department

Physics Department

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https://pdf.sciencedirectassets.com/271378/1-s2.0-S0921510722X0010X/1-s2.0-S0921510722006110/main.pdf?X-Amz-Security-Token=IQoJb3JpZ2luX2VjEEkaCXVzLWVhc3QtMSJHMEUCIQDFyEQRmtnZQYl7%2FMbjMSXmsv4tfWZe12N3HOqFH2MPdAIgf%2FVfLA7c3sozHis5pycdm5s3LETIntLW%2Bo5w7EfKq%2B8qugUI8v%2F%2F%2F%2F%2F%2F%2F%2F%2F%2FARAFGgwwNTkwMDM1NDY4NjUiDKihWGtDWJ1dJMFShiqOBZueogXF%2BmScKMq6eeDVjYwa%2Bf0KZ5GdeynEhkmuzsgfiRsEHqg88IrWSpa9iEshQHvmwwmx9bdwAHit6wDiU5GBb3qil2YGSncoFADSkUw38nkEXlHl3EEzbETy32qZhTK7IxCNt8MEeDhN1RgbjjRcgJeKyYvy8n3FEqX1Px%2FctwX2skPPvHJBtkx%2FkU3y1wmV0mRVl0%2F9T3j7EQ1fNFeJIIB6JXDIt6BCKXKlYya47xCCa5KrwAQCwGq%2Fc%2BnwKZ2NDcuZHrT0%2BIUjW3UQPj7nz6frhuZFNNW79Q4QQdprDS1ySHFdpYL7USA6z7fmTABcETy1d61VfoXTYKpDcpxN0mIPBvGwVYKL6FQgV8aixblbRF5Sh1TuxCvXjxJsh2USkK5JzgFDvtZjaUl%2FdhgpFZmLgdLi3JeD5Bjl2ydsw8gxufGZLztOzEeVH%2Bts6PC4b9JXT2CHZDTB3S1fmG%2FrJgvUw5BCNIJl2auwRP9WacY8ySDna%2BhY5Y8cz6CJrBlhZJA7EKUjuueybM%2F9ZfhGGpzeBMSRuwHfT29L7rPX8zLOI4%2BUp8bOwvYbkeex1mGHxUAFYdN91MXFpPHWnG0ce8LJ9RCcnX7Dtm5zH2%2BtbqvYIb%2FJYPT4DyWZjiKdnfEpwfMB1kp7Keo7igz98Gm4R1sAK0WCu%2B7Gq%2B%2FLe38v1zii6KgcAEdmxXhXkaQc9hHwR8dOEm%2Bys4M4r8YSaSMnsjlzVz32cSHyP38%2F2HQhZadqmcxwWlccB35odIY6uz6oDOKxXJFbVKkGhLEBUSfKonuZiWW1FBctxJihZiB1lHKYf6%2BC5%2FvgLyomJiif8Pspn2LvuWU7I3u0%2BK2lmzDaRbVUzPIYVjCMz7j6GTDjlZOgBjqxAd6NFO4Yi4%2BfnCq2XDti0FTyNn8iMlZfB8iQdfX7oYQhdxSEmtK6qU9zqCZcO3JpC68zxV%2B3ygpLJ4ud9nAyRCkf69%2F3s11KEaQQcimyy7hhtbLa0F5x52wC8T6hqGlTtAoqW9BC4cXj%2Fg9mhDcurlsrk6C093zX3u431cYaeu%2F2BQBZPbvvn2Xm5EHHecXqUOp0bZ7MMfk9sn6ZyXkinkyYUPrlD%2FnSdYamB0KyRXn94Q%3D%3D&X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Date=20230305T180615Z&X-Amz-SignedHeaders=host&X-Amz-Expires=300&X-Amz-Credential=ASIAQ3PHCVTYQVPQYQD7%2F20230305%2Fus-east-1%2Fs3%2Faws4_request&X-Amz-Signature=63419c6e8adb542c8ece6a3598a27a996d9e36206c3f63409abad9bb833fba59&hash=e73d46232448dbccc1ee7838fd03b6f8075f1c67299e32f80cf51a4d35e1af34&host=68042c943591013ac2b2430a89b270f6af2c76d8dfd086a07176afe7c76c2c61&pii=S0921510722006110&tid=spdf-16a89615-0099-4e43-bc1e-fe08f96c1b86&sid=219e86eb719d8541a08bf510df1f091efa42gxrqb&type=client&tsoh=d3d3LnNjaWVuY2VkaXJlY3QuY29t&ua=030258045d5651000454&rr=7a344ab0e8140c51&cc=eg

All Authors

Asma M. Elkhodary, S.M. El Sheikh, Hosny A. Omar, Manal A. Mahdy, Iman A. Mahdy

Document Type

Research Article

Publication Title

Materials Science and Engineering: B

Publication Date

Spring 3-1-2023

doi

https://doi.org/10.1016/j.mseb.2022.116223

Abstract

Pb50-xGexTe50 (x = 15, 20, 25, 30 at. %) nanocrystalline bulk alloys were prepared using solid-state direct reaction. X-ray diffraction and high-resolution transmission electron microscopy (HR-TEM) analysis of the reference structure (Ge = 15 at.%) revealed a slightly distorted cubic structure, with a lattice parameter of 6.43 Å and an inter-axis unit cell angle of 88.69°. Atomic force images' analysis and histograms displayed a homogenous particle size distribution in the nanoscale for all samples. Density measurements showed a gradual decrease from 7.89 to 6.98 g/cm3 with increasing Ge content in agreement with the calculated values. The polarization–field hysteresis behavior verifies the ferroelectric activity of the prepared alloys, suggesting them as potential candidates for non-volatile ferroelectric memory devices (NVFRAMs) applications. Optical properties analyzed using diffuse reflectance measurements exhibited direct transitions with a bandgap decreasing from 1.57 to 1.35 eV with increasing Ge content matching the near-infrared spectrum (NIR) perfectly.

First Page

1

Last Page

16

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