Growth of high-quality GaN nanowires on p-Si (1 1 1) and their performance in solid state heterojunction solar cells
Funding Number
375213500
Find in your Library
https://doi.org/10.1016/j.solener.2021.09.045
Document Type
Research Article
Publication Title
Solar Energy
Publication Date
10-1-2021
doi
10.1016/j.solener.2021.09.045
Abstract
We report on the optimized growth of catalyst-free GaN nanowires (NWs)/p-Si by the vapor–solid (V-S) method using chemical vapor deposition (CVD). The effect of NH3 gas flow rate on the morphology and photovoltaic behavior of the material has been investigated. The length and the diameter of the NWs decrease as the NH3 flow rate increases. Raman and X-ray diffraction (XRD) analyses reveal lower internal stress in the prepared NWs. The photoluminescence (PL) spectra indicate strong near band-edge (NBE) peaks extending from 365 to 368 nm and their intensity varied significantly with the NH3 flow rate. The assembled n-GaN NWs/p-Si solar cell devices reveal a maximum conversion efficiency of ∼7.87% under AM 1.5G illumination. This study shows that the morphology, optical, and performance of the fabricated n-GaN NWs on p-Si are strongly affected by the gas flow rate.
First Page
525
Last Page
531
Recommended Citation
APA Citation
Saron, K.
Ibrahim, M.
Taha, T.
Aljameel, A.
...
(2021). Growth of high-quality GaN nanowires on p-Si (1 1 1) and their performance in solid state heterojunction solar cells. Solar Energy, 227, 525–531.
10.1016/j.solener.2021.09.045
https://fount.aucegypt.edu/faculty_journal_articles/2765
MLA Citation
Saron, K. M.A., et al.
"Growth of high-quality GaN nanowires on p-Si (1 1 1) and their performance in solid state heterojunction solar cells." Solar Energy, vol. 227, 2021, pp. 525–531.
https://fount.aucegypt.edu/faculty_journal_articles/2765