Selective laser annealing for improved sige MEMS structural layers at 210°C
Files
Department
Physics Department
Description
[abstract not available]
Publication Date
6-1-2010
Document Type
Book Chapter
Book Title
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISBN
SCOPUS_ID:77952767994
Publisher
IEEE
City
Hong Kong, China
First Page
324
Last Page
327
Recommended Citation
APA Citation
El-Rifai, J.
Witvrouw, A.
Aziz, A.
Puers, R.
&
Van Hoof, C.
(2010).Selective laser annealing for improved sige MEMS structural layers at 210°C. IEEE. , 324-327
https://fount.aucegypt.edu/faculty_book_chapters/757
MLA Citation
El-Rifai, Joumana, et al.
Selective laser annealing for improved sige MEMS structural layers at 210°C. IEEE, 2010.pp. 324-327
https://fount.aucegypt.edu/faculty_book_chapters/757