Refractive index change in porous silicon after detaching from the substrate
Files
Department
Physics Department
Description
[abstract not available]
Publication Date
12-1-2010
Document Type
Book Chapter
Book Title
2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010
ISBN
SCOPUS_ID:79952838789
Publisher
IEEE
City
Guangzhou, China
First Page
1
Last Page
5
Keywords
Annealing, Bragg reflectors, Porous silicon, Porous silicon oxidation, sress, Refractive index, Silicon electrochemical etching, Strain
Recommended Citation
APA Citation
Gaber, N.
Shaarawi, A.
&
Khalil, D.
(2010).Refractive index change in porous silicon after detaching from the substrate. IEEE. , 1-5
https://fount.aucegypt.edu/faculty_book_chapters/731
MLA Citation
Gaber, Noha, et al.
Refractive index change in porous silicon after detaching from the substrate. IEEE, 2010.pp. 1-5
https://fount.aucegypt.edu/faculty_book_chapters/731