Refractive index change in porous silicon after detaching from the substrate

Authors

Noha Gaber, American University in Cairo
Amr Shaarawi, American University in CairoFollow
Diaa Khalil, Ain Shams University

Files

Department

Physics Department

Abstract

[abstract not available]

Publication Date

12-1-2010

Document Type

Book Chapter

Book Title

2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010

ISBN

SCOPUS_ID:79952838789

Publisher

IEEE

City

Guangzhou, China

First Page

1

Last Page

5

Keywords

Annealing, Bragg reflectors, Porous silicon, Porous silicon oxidation, sress, Refractive index, Silicon electrochemical etching, Strain

Recommended Citation

APA Citation

Gaber, N. Shaarawi, A. & Khalil, D. (2010).Refractive index change in porous silicon after detaching from the substrate. IEEE. , 1-5
https://fount.aucegypt.edu/faculty_book_chapters/731

MLA Citation

Gaber, Noha, et al. Refractive index change in porous silicon after detaching from the substrate. IEEE, 2010.pp. 1-5
https://fount.aucegypt.edu/faculty_book_chapters/731