B6. Delivering maximum power from microwave transistors
Files
Department
Electronics & Communications Engineering Department
Description
[abstract not available]
Publication Date
7-2-2012
Document Type
Book Chapter
Book Title
National Radio Science Conference, NRSC, Proceedings
ISBN
SCOPUS_ID:84862876894
Publisher
IEEE
City
Cairo, Egypt
First Page
53
Last Page
55
Keywords
FET/HEMT model, Microwave transistors, mm-wave frequency, Optimum load
Recommended Citation
APA Citation
Khorshid, A.
Darwish, A.
&
Rajaie, A.
(2012).B6. Delivering maximum power from microwave transistors. IEEE. , 53-55
https://fount.aucegypt.edu/faculty_book_chapters/652
MLA Citation
Khorshid, Ahmed, et al.
B6. Delivering maximum power from microwave transistors. IEEE, 2012.pp. 53-55
https://fount.aucegypt.edu/faculty_book_chapters/652