Analysis and optimization for dynamic read stability in 28nm SRAM bitcells
Files
Department
Electronics & Communications Engineering Department
Abstract
[abstract not available]
Publication Date
1-1-2015
Document Type
Book Chapter
Book Title
Proceedings - IEEE International Symposium on Circuits and Systems
ISBN
SCOPUS_ID:84946202553
Publisher
IEEE
City
Lisbon, Portugal
First Page
1414
Last Page
1417
Keywords
6T SRAM, Cell sizing, Dynamic behavior, FD SOI, parasitic capacitances, Read Noise Margin
Recommended Citation
APA Citation
Elthakeb, A.
Haine, T.
Flandre, D.
Ismail, Y.
&
Elhamid, H.
(2015).Analysis and optimization for dynamic read stability in 28nm SRAM bitcells. IEEE. , 1414-1417
https://fount.aucegypt.edu/faculty_book_chapters/451
MLA Citation
Elthakeb, Ahmed T., et al.
Analysis and optimization for dynamic read stability in 28nm SRAM bitcells. IEEE, 2015.pp. 1414-1417
https://fount.aucegypt.edu/faculty_book_chapters/451