RRAM refresh circuit: A proposed solution to resolve the soft-error failures for HfO₂/Hf 1T1R RRAM memory cell

Authors

Amr M.S. Tosson, University of Waterloo
Mohab Anis, American University in CairoFollow
Lan Wei, University of Waterloo

Files

Department

Electronics & Communications Engineering Department

Abstract

[abstract not available]

Publication Date

5-18-2016

Document Type

Book Chapter

Book Title

Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI

ISBN

SCOPUS_ID:84974704974

Publisher

Association for Computing Machinery

City

New York, NY

First Page

227

Last Page

232

Recommended Citation

APA Citation

Tosson, A. Anis, M. & Wei, L. (2016). RRAM refresh circuit: A proposed solution to resolve the soft-error failures for HfO₂/Hf 1T1R RRAM memory cell. Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI (pp. 227-232). Association for Computing Machinery.

MLA Citation

Tosson, Amr M.S., et al. "RRAM refresh circuit: A proposed solution to resolve the soft-error failures for HfO₂/Hf 1T1R RRAM memory cell." Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI, Association for Computing Machinery, 2016. pp. 227-232