Silicon-plasmonic-integrated mid-infrared sensor using CMOS technology
Files
Department
Physics Department
Description
[abstract not available]
Publication Date
1-1-2017
Document Type
Book Chapter
Book Title
Proceedings of SPIE - The International Society for Optical Engineering
ISBN
SCOPUS_ID:85019214278
Publisher
SPIE
City
San Francisco, CA
First Page
1
Last Page
6
Keywords
FDTD, heavily doped Silicon, mid infrared sensing, Plasmonics
Recommended Citation
APA Citation
Sherif, S.
&
Swillam, M. A.
(2017).Silicon-plasmonic-integrated mid-infrared sensor using CMOS technology. SPIE. , 1-6
https://fount.aucegypt.edu/faculty_book_chapters/272
MLA Citation
Sherif, S. M., et al.
Silicon-plasmonic-integrated mid-infrared sensor using CMOS technology. SPIE, 2017.pp. 1-6
https://fount.aucegypt.edu/faculty_book_chapters/272