Silicon-plasmonic-integrated mid-infrared sensor using CMOS technology

Authors

S. M. Sherif, American University in Cairo
Mohamed A. Swillam, American University in CairoFollow

Files

Department

Physics Department

Abstract

[abstract not available]

Publication Date

1-1-2017

Document Type

Book Chapter

Book Title

Proceedings of SPIE - The International Society for Optical Engineering

ISBN

SCOPUS_ID:85019214278

Publisher

SPIE

City

San Francisco, CA

First Page

1

Last Page

6

Keywords

FDTD, heavily doped Silicon, mid infrared sensing, Plasmonics

Recommended Citation

APA Citation

Sherif, S. & Swillam, M. A. (2017).Silicon-plasmonic-integrated mid-infrared sensor using CMOS technology. SPIE. , 1-6
https://fount.aucegypt.edu/faculty_book_chapters/272

MLA Citation

Sherif, S. M., et al. Silicon-plasmonic-integrated mid-infrared sensor using CMOS technology. SPIE, 2017.pp. 1-6
https://fount.aucegypt.edu/faculty_book_chapters/272