Modeling of double-gate LDMOSFET devices including self-heating
Files
Department
Electronics & Communications Engineering Department
Description
[abstract not available]
Publication Date
12-1-2019
Document Type
Book Chapter
Book Title
Proceedings of the International Conference on Microelectronics, ICM
ISBN
9781728140582
Publisher
IEEE
City
Piscataway, NJ
First Page
235
Last Page
239
Keywords
Double-gate, LDMOSFET, Self-heating, Thermal resistance
Recommended Citation
APA Citation
El-Dakroury, M.
Eladawy, M.
Nosseir, Z.
Ismail, Y.
&
Abdelhamid, H.
(2019).Modeling of double-gate LDMOSFET devices including self-heating. IEEE. , 235-239
https://fount.aucegypt.edu/faculty_book_chapters/144
MLA Citation
El-Dakroury, Mohamed M., et al.
Modeling of double-gate LDMOSFET devices including self-heating. IEEE, 2019.pp. 235-239
https://fount.aucegypt.edu/faculty_book_chapters/144