Title
High-field mobility effects in junction-gate field-effect transistors
Date of Award
January 1972
Online Submission Date
January 1972
Document Type
Thesis
Extent
141 leaves
Library of Congress Subject Heading 1
Field-effect transistors.
Rights
The author retains all rights with regard to copyright. The author certifies that written permission from the owner(s) of third-party copyrighted matter included in the thesis, dissertation, paper, or record of study has been obtained. The author further certifies that IRB approval has been obtained for this thesis, or that IRB approval is not necessary for this thesis. Insofar as this thesis, dissertation, paper, or record of study is an educational record as defined in the Family Educational Rights and Privacy Act (FERPA) (20 USC 1232g), the author has granted consent to disclosure of it to anyone who requests a copy.
Recommended Citation
APA Citation
Boctor, W.
(1972).High-field mobility effects in junction-gate field-effect transistors [Thesis, the American University in Cairo]. AUC Knowledge Fountain.
https://fount.aucegypt.edu/retro_etds/187
MLA Citation
Boctor, Waguih John. High-field mobility effects in junction-gate field-effect transistors. 1972. American University in Cairo, Thesis. AUC Knowledge Fountain.
https://fount.aucegypt.edu/retro_etds/187
Call Number
Thesis 1972/216
Location
mgfth