Title

High-field mobility effects in junction-gate field-effect transistors

Author

Waguih John Boctor

Date of Award

January 1972

Online Submission Date

January 1972

Document Type

Thesis

Extent

141 leaves

Library of Congress Subject Heading 1

Field-effect transistors.

Rights

The author retains all rights with regard to copyright. The author certifies that written permission from the owner(s) of third-party copyrighted matter included in the thesis, dissertation, paper, or record of study has been obtained. The author further certifies that IRB approval has been obtained for this thesis, or that IRB approval is not necessary for this thesis. Insofar as this thesis, dissertation, paper, or record of study is an educational record as defined in the Family Educational Rights and Privacy Act (FERPA) (20 USC 1232g), the author has granted consent to disclosure of it to anyone who requests a copy.

Recommended Citation

APA Citation

Boctor, W. (1972).High-field mobility effects in junction-gate field-effect transistors [Thesis, the American University in Cairo]. AUC Knowledge Fountain.
https://fount.aucegypt.edu/retro_etds/187

MLA Citation

Boctor, Waguih John. High-field mobility effects in junction-gate field-effect transistors. 1972. American University in Cairo, Thesis. AUC Knowledge Fountain.
https://fount.aucegypt.edu/retro_etds/187

Call Number

Thesis 1972/216

Location

mgfth