Impact behavior of a novel GaN/MoS2 composite photodiode based thin-film by RF-sputtering for fast response photodetection application

Funding Sponsor

Cairo University

Fifth Author's Department

Physics Department

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https://doi.org/10.1007/s11082-024-06643-w

All Authors

Ahmed Abdelhady A. Khalil, Abdallah M. Karmalawi, Alaaeldin A. Abdelmageed, Hamdan A.S. Al-shamiri, Emad Mousa, Heba A. Shawkey, Maram T.H. Abou Kana, Hamed M. Kandel, Mohamed A. Swillam

Document Type

Research Article

Publication Title

Optical and Quantum Electronics

Publication Date

5-1-2024

doi

10.1007/s11082-024-06643-w

Abstract

In this study, we present the manufacture and characterisation of a novel thin film photodiode based on a GaN/MoS2 composite. The purpose of this research is to explore the potential of this composite material for applications in fast response photodetection. The photodiodes were fabricated using physical vapor deposition technique. The investigation of the surface topology and structural characteristics of the nanostructured GaN/MoS2 thin films was conducted using scanning electron microscopy, Fourier-transform infrared spectroscopy, and X-ray diffraction techniques. The electrical performance of the fabricated photodiodes was investigated by measuring their current–voltage (I–V) characteristics within a bias voltage range from − 2 to + 2 V. The external quantum efficiency of the photodiodes were measured to be up to 11.86% and 8.26% for the pn-photodiode and Schottky photodiode, respectively. On the other hand, the internal quantum efficiency of the fabricated photodiodes were measured to be up to 13.78% and 10.02% for the pn-photodiode and Schottky photodiode, respectively. Also, a response time of 800 µs and 18.23 ms for Schottky-photodiode and pn-photodiodes respectively. These results demonstrate the potential of GaN/MoS2 composite photodiodes for fast response photodetection applications.

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