Towards high-efficiency CZTS solar cells via p-MoS2 interfacial layer optimisation

Author's Department

Computer Science & Engineering Department

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https://doi.org/10.1080/10667857.2021.1964214

Document Type

Research Article

Publication Title

Materials Technology

Publication Date

1-1-2021

doi

10.1080/10667857.2021.1964214

Abstract

This paper discusses the impact of the p-MoS2 transition metal dichalcogenide as an interfacial layer between the CZTS absorber and Mo back contact in the CZTS based solar cell. The study was performed using SCAPS-1D numerical simulation. The I–V characteristic demonstrated a higher slope than CZTS solar cells without considering the interfacial layer. The results verified that the p-MoS2 layer beneficially on the CZTS/Mo hetero-contact mediating an ohmic contact. Accordingly, the conversion efficiency improves from 12.14% to 16.71%. To evaluate the role of the p-MoS2 layer, various performance parameters such as open-circuit voltage (Voc), short circuit current (Jsc), fill factor FF, and efficiency η were explored versus thicknesses, bandgap energies, and the acceptor carrier concentration (NA). The results show that a thickness of the interfacial layer of less than 200 nm could cause deterioration of the overall cell performance, mainly due to created high barriers at the CZTS/p-MoS2 and p-MoS2/Mo interfaces, at low thicknesses, which impedes the drift of photogenerated holes. Additionally, increasing the NA above 1016 cm−3 improves the cell performance, owing to the favourable band alignment at the back contact. Values obtained for Voc and Jsc are 0.88 V and 25.5 mA/cm2, respectively. Moreover, the effect of series resistance Rs on CZTS solar cells was investigated. The efficiency decreases from 12.84% to 9.69% when the Rs correspondingly increases from 0 Ω to 5 Ω.

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