Comparison of AuNi₅ films deposited by laser ablation and sputtering for RF MEMS switch contacts

Authors

Noha Sameh Farghal, American University in Cairo
Amr Shaarawi, American University in CairoFollow
Philippe Soussan, Interuniversity Micro-Electronics Center at Leuven

Funding Sponsor

American University in Cairo

Author's Department

Physics Department

Find in your Library

https://doi.org/10.1016/j.mee.2010.11.007

Document Type

Research Article

Publication Title

Microelectronic Engineering

Publication Date

3-1-2011

doi

10.1016/j.mee.2010.11.007

First Page

268

Last Page

272

Recommended Citation

APA Citation

Farghal, N. Shaarawi, A. & Soussan, P. (2011). Comparison of AuNi₅ films deposited by laser ablation and sputtering for RF MEMS switch contacts. Microelectronic Engineering, 88(3), 268–272. 10.1016/j.mee.2010.11.007
https://fount.aucegypt.edu/faculty_journal_articles/2255

MLA Citation

Farghal, Noha Sameh, et al. "Comparison of AuNi₅ films deposited by laser ablation and sputtering for RF MEMS switch contacts." Microelectronic Engineering, vol. 88,no. 3, 2011, pp. 268–272.
https://fount.aucegypt.edu/faculty_journal_articles/2255