Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties
Author's Department
Physics Department
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https://doi.org/10.1063/1.4798266
Document Type
Research Article
Publication Title
Journal of Applied Physics
Publication Date
3-28-2013
doi
10.1063/1.4798266
Recommended Citation
APA Citation
Saron, K.
Hashim, M.
&
Allam, N.
(2013). Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties. Journal of Applied Physics, 113(12),
10.1063/1.4798266
https://fount.aucegypt.edu/faculty_journal_articles/2002
MLA Citation
Saron, K. M.A., et al.
"Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties." Journal of Applied Physics, vol. 113,no. 12, 2013,
https://fount.aucegypt.edu/faculty_journal_articles/2002