Title

Electrical characterization of nanopolyaniline/porous silicon heterojunction at high temperatures

Author's Department

Physics Department

Find in your Library

https://doi.org/10.1155/2013/568175

Document Type

Research Article

Publication Title

Journal of Nanomaterials

Publication Date

4-3-2013

doi

10.1155/2013/568175

Abstract

Nanopolyaniline/p-type porous silicon (NPANI/PSi) heterojunction films were chemically fabricated via in situ polymerization. The composition and morphology of the nanopolymer were confirmed using Fourier transform infrared, scanning electron microscopy, UV-visible, and transmission electron microscopy techniques. The results indicated that the polymerization took place throughout the porous layer. The I-V measurements, performed at different temperatures, enabled the calculation of ideality factor, barrier height, and series resistance of those films. The obtained ideality factor showed a nonideal diode behavior. The series resistance was found to decrease with increasing temperature. © 2013 Salah E. El-Zohary et al.

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